Briefly
We are looking for a motivated and technically strong Device Engineer to support GaN device development activities, with a focus on DC electrical characterisation, data analysis and collaboration with external fabrication and test facilities.

Quick info
Location Israel
Start TBD
Type Full time

Job description

Provide technical expertise in DC electrical characterisation of GaN power devices, including Id–Vgs, Id–Vds, CV and breakdown measurements, using high-precision DC/analog techniques.
Analyse, summarise and interpret electrical measurement data to support device development, process optimisation and qualification.
Support planning and evaluation of experiments, including DOE related to device design, layout and process changes.
Apply deep understanding of semiconductor process technology and GaN device physics to proactive problem-solving and root-cause analysis of performance, yield or reliability-related issues.
Collaborate effectively with design, layout and process teams as a strong technical team player in cross-functional and distributed environments.
Interface with external fabrication and test facilities, including technical discussions, data reviews and periodic on-site support as required.

Preferred / Nice to Have

Familiarity with reliability concepts and qualification approaches for GaN power devices.
Basic understanding of GaN epitaxial structures and their impact on device performance.
Proficiency with data analysis tools such as JMP or equivalent statistical software.

Preferences

Bachelor’s degree in Electrical Engineering, Physics or a related field.
Minimum 3 years of experience in device engineering, characterisation or related semiconductor roles.

Device Engineer (all genders)